Zirconium(IV) tert-butoxide

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CAS: 2081-12-1
MF: 4[C4H9O-].Zr+4
MW: 383.67864
Synonyms: Zirconium(IV) tert-butoxide

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Wenhao Hu

East China Normal University
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Dong Xing

East China Normal University
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Jeffrey Schwartz

Princeton University
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Co-reporter: Casey M. Jones, Patrick E. Donnelly and Jeffrey Schwartz
pp: 2185
Publication Date(Web):August 9, 2010
DOI: 10.1021/am1004893
A novel interface was prepared on glass slides that stabilizes several cast polymers against delamination under conditions necessary for the study of cell surface interactions. This interface was synthesized by deposition of zirconium tetra(tert-butoxide) from the vapor phase onto the glass followed by mild thermolysis, which gives a surface-bound zirconium oxide coating. This oxide coating improved attachment of polymer coatings cast from formic acid or methylene chloride. Nylon, polyurethane, and polyhydroxybutyrate/polyhydroxyvalerate coatings were stable against delamination from the oxide-coated glass following sonication in ethanol for more than 30 min or immersion in water at pH 8 for at least 48 h.Keywords: delamination inhibition; glass surface modification; polymer casting; polymer−glass interface

Jean Schwarzbauer

Princeton University
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Steven M. George

University of Colorado
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Co-reporter: Younghee Lee, Huaxing Sun, Matthias J. Young, and Steven M. George
pp: 2022
Publication Date(Web):March 1, 2016
DOI: 10.1021/acs.chemmater.5b04360
The atomic layer deposition (ALD) of a variety of metal fluorides including ZrF4, MnF2, HfF4, MgF2, and ZnF2 was demonstrated using HF from a HF–pyridine solution. In situ quartz crystal microbalance (QCM) studies were utilized to examine the growth of these metal fluorides. ZrF4 ALD using tetrakis(ethylmethylamido) zirconium and HF as the reactants was studied as a model system. The QCM measurements determined a mass gain per cycle (MGPC) of 35.5 ng/(cm2 cycle) for ZrF4 ALD at 150 °C. This MGPC was equivalent to a growth rate of 0.9 Å/cycle at 150 °C. MnF2, HfF4, MgF2, ZnF2, and additional ZrF4 were also grown using bis(ethylcyclopentadienyl) manganese, tetrakis(dimethylamido) hafnium, bis(ethylcyclopentadienyl) magnesium, diethylzinc, and zirconium tetra-tert-butoxide as the metal precursors, respectively. The growth rates for MnF2, HfF4, MgF2, ZnF2, and ZrF4 ALD were 0.4, 0.8, 0.4, 0.7, and 0.6 Å/cycle, respectively, at 150 °C. All of these metal fluoride ALD systems displayed self-limiting reactions. Ex situ measurements of the growth rates using X-ray reflectivity and spectroscopic ellipsometry analysis agreed with the in situ QCM measurements. Analysis of the QCM mass changes after the individual metal precursor and HF exposures quantified HF adsorption after the HF reaction. The ZrF4 and HfF4 films acted as strong Lewis acids and adsorbed an average of two HF per deposited MFy species after the HF reaction. In contrast, the MnF2, MgF2, and ZnF2 films all behaved as weak Lewis acids and did not adsorb HF after the HF reaction. The refractive indices of the metal fluoride films were in agreement with previous optical measurements. Most of the metal fluoride films were crystalline as measured by X-ray diffraction studies. The majority of the metal fluoride films also had high purity as established by X-ray photoelectron spectroscopy studies. This pathway for metal fluoride ALD using HF–pyridine as the fluorine precursor will be useful for many applications of metal fluoride films such as optical coatings in the ultraviolet wavelength region.

Kenneth G. Caulton

Indiana University
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Jun Okuda

RWTH Aachen University
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R. Brückner

University of Freiburg
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Claus Feldmann

Institut für Anorganische Chemie
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Johannes A. Lercher

Technische Universit?t München
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