Co-reporter:Guoliang Li, Julia K.C. Abbott, John D. Brasfield, Peizhi Liu, Alexis Dale, Gerd Duscher, Philip D. Rack, Charles S. Feigerle
Applied Surface Science 2015 Volume 327() pp:7-12
Publication Date(Web):1 February 2015
DOI:10.1016/j.apsusc.2014.11.037
Highlights
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Crystalline boron phosphide was grown on vicinal 4H (0 0 0 1)-SiC surfaces.
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The microstructure evolution of defects generated at the interface was characterized by transmission electron microscopy.
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The evolution of lattice distortion and strain are determined.