The vibrational Raman spectra of cadmium manganese telluride (Cd1−xMnxTe, CMT) were investigated in the range of 100–400 cm−1 at room temperature. The dominant peaks at 140 and 161 cm−1 were identified as transverse optic (TO) mode and longitudinal optic (LO) mode of “CdTe-like”, while the emission peak at 124 cm−1 was attributed to Te precipitates. The Te precipitates in CMT crystals were further investigated by field scanning electron microscope (FSEM) and transmission electron microscopy (TEM) observations. The results showed that the Te precipitates were the monoclinic phase with cell parameters of a = 0.3104 nm, b = 0.789 nm, c = 0.4683 and β = 92.71°. The orientational relationship between Te precipitate and the matrix was determined to be (0 3¯ 1)Te//(2¯ 0 2)CMT.

Faraday rotation in indium (In) doped Cd1−xMnxTe (CMT) single crystals is studied for the first time at room temperature. We extend a multioscillator model for the Faraday rotation of In doped CMT (CMT: In) by using an analytical expression for the refractive index that includes the contributions from interband transitions at the ΓΓ, LL and XX points of the Brillouin zone as well as the contribution from transition caused by doping. Based on the band gap at the ΓΓ-point in the Brillouin zone (E0E0) and EDA gap caused by doping, a simple energy level distribution model is put forward. Finally, the results of the PL spectra verify the existence of the EDA.

•A Vanadium doped Cd0.9Mn0.1Te ingot was grown by Te solution method.•Having a high resistivity of 4.123×1010 Ω cm.•Having a highIR Transmission of 63%.•PL spectra showed a high quality of crystallization and a low impurities concentration.Vanadium (V) doped Cd0.9Mn0.1Te (CdMnTe:V) crystals were grown with a nominal Vanadium concentration of 1×1017atoms/cm3 from excess 10 at% Te solution that was carried out by the vertical Bridgman method with accelerated crucible rotation technique(ACRT). The as-grown crystals display a high resistance characteristic of 4.123×101°Ω·cm in the wafer cutting from the middle part of the ingot. The infrared microscopy images show that the planar density of Te inclusions/precipitates in the crystals is between 1.4×103 to 6×105 cm−2. The measured highest IR transmission in the middle part of the ingot of 63% is near the theoretical limit of 65%. Moreover, the PL spectra show a sharp (D°, X) peak, a flat Dcomplex peak and a low DAP peak. The (D°, X) peak has a FWHM of 4.36 meV, indicating a high quality of crystallization, while a flat Dcomplex peak means very low dislocations and defects relative to the vacancies of Cd in the middle part of this ingot. The low DAP peak with a relative intensity of IDAP/I(D°, X) of 0.045 demonstrates low impurity concentration in this crystal.