A structure of power trench MOSFET with SiGeC-channel is presented in this paper. The models applicable for the SiGeC-channel trench MOSFET (SGCT) are presented and the improved device characteristics by incorporation smaller-sized carbon atoms substitution into the SiGe system are simulated and analyzed. Simulation results show that SiGeC alloy is a promising channel material for power trench MOSFET application. SGCT owns better IDS–VDS characteristic, higher saturated current, lower On-state resistance and bigger breakdown voltage compared to the trench MOSFET devices with SiGe-channel. The stability structure works well and the performance of SGCT is improved by C incorporation though the investigated simulations of On-state resistance and breakdown voltage in different temperatures.

We present here a power Trench MOSFET (T-MOS) with retrograde body doping profile. The channel length and trench depth are both shortened compared with conventional T-MOS. High energy implantation is used to form retrograde body profile. Electronic parameters of the new structure have been obtained by process and device simulation. The results show that the new structure has much lower specific on-resistance (Rds,on) because of its shorter channel when compared with conventional T-MOS. As the trench depth is shallowed, the gate charge density Qg is also reduced.

Efficiency of Zr–Si diffusion barriers in Cu metallization has been investigated. Amorphous Zr–Si diffusion barriers were deposited on the Si substrates by reactive magnetron sputtering with different negative substrate bias. The mass density of Zr–Si films increases with substrate bias voltage up to − 150 V. The deposition rate decreased with the negative substrate bias from 5.4 nm/min to 1.8 nm/min. XRD measurements show that the Zr–Si barriers have amorphous structure in the as-deposited state. The FE-SEM images show that the sizes of spherical granules on the Zr–Si film surface increase with increasing the substrate bias. The Cu/Zr–Si/Si structures were prepared and annealed in Ar ambient at temperatures varying from 500 to 650 °C for an hour. It is shown from the comparison study that the Zr–Si film deposited with − 150 V is better at maintaining good performance in Cu/Zr–Si/Si contact system than that of Zr–Si film deposited with − 50 V.

The publisher regrets that this article is an accidental duplication of an article that has already been published in Mater. Lett., 62 (2008) 1547–1550, doi:10.1016/j.matlet.2007.09.020. The duplicate article has therefore been withdrawn.

The effect of substrate temperature on the thermal stability of Cu/Zr–N/Si contact systems was investigated. Zr–N films were deposited on the Si substrates by RF reactive magnetron sputtering under various substrate temperatures. Cu films were in-situ sputtered onto the Zr–N films subsequently. The contact systems were characterized using four-point probe sheet resistance measurements (Rs), X-ray diffraction (XRD), and scanning electron microscopy (SEM) respectively. It was found that the sheet resistances of Cu/Zr–N (350 °C)/Si contact system were lower than those of Cu/Zr–N (150 °C)/Si specimens after annealing at 650 °C. Cu/Zr–N (350 °C)/Si contact systems showed better thermal stability so that the Cu3Si phase could not be detected. It is indicated from the comparison analysis results that the Zr–N film showed better diffusion barrier performance deposited under higher substrate temperature.

Zr–N thin films as a barrier in Cu/Si contact were investigated. The Cu/Zr–N/Si specimens were prepared and annealed at temperatures up to 700 °C in N2 ambient for an hour. Characterization of phase composition and crystallite structure of the barriers was performed by XRD, the film morphology was examined using atomic force microscopy (AFM), and the composition profiles of the as-deposited and annealed samples of Cu/Zr–N/Si were identified by Auger electron spectroscopy (AES). It is evident that the Zr–N film structure is very sensitive to the deposition conditions. Cu/Zr–N/Si contact systems showed better thermal stability so that the Cu3Si phase could not be detected. It is indicated from the comparison analysis results that the Zr–N film showed better thermal stability with increasing N2 flow ratio and/or negative substrate bias.