A physical based model for predicting the performance degradation of the FinFET is developed accounting for the interface state distribution effect due to hot carrier injection (HCI). The non-uniform distribution of interface state along the FinFET channel is first extracted by a forward gated-diode method and then reproduced by an empirical model. From this, a physical-based device model, which accounts for the interface state distribution effect, is developed to predict the performance degradation of FinFET. The result shows that the developed model not only matches well with the experimental data of FinFET in all operation regions, but also predicts the asymmetric degradation of saturation drain current in forward and reverse operation mode. Finally, the impact of HCI to a 6-T SRAM cell is simulated using HSPICE.

An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA) MOSFETs is presented in this work. The fringing field from the gate to underlap regions is derived by using channel length transformation and conformal mapping. The result is then applied to solve the Poisson equation to obtain the subthreshold potential distribution in the channel region of a GAA MOSFET. The model has been verified by extensive three dimensional numerical simulations.

In this paper, two present compact models for generic undoped double-gate (DG) MOSFETs are compared and discussed from aspects of formulations, advantages, prediction result, and computational efficiency. The models under comparison make fundamental contributions to generic DG MOSFET modeling. However, the applications of these models are hindered by their own drawbacks which are discussed in this work. The comparison results will provide a very useful reference and may benefit the future work for researchers to improve the development of double-gate MOSFET compact model. In addition, the calculation efficiency is extensively improved based on the Jacobian-Newton iterative method with a universal initial guess.

A generic numerical model which is valid both in the strong inversion regime and sub-threshold regime for the detection of terahertz radiation utilizing Metal–Oxide–Semiconductor (MOS) Field-Effect Transistors (FETs) is developed in this paper. A general carrier density equation and gate leakage current are coupled to the basic hydrodynamic equations which govern the electron transport in the 2D channel of the MOS field-effect transistor to obtain the numerical solution; a progress-based photo-response signal of the terahertz radiation of MOSFET is calculated. The simulation results are compared with existing analytical results, proving the validity of the proposed numerical model and overcoming limitations of the analytical theories.