CuSbSe₂ appears to be a promising absorber material for thin-film solar cells due to its attractive optical and electrical properties, as well as earth-abundant, low-cost, and low-toxic constituent elements. However, no systematic study on the fundamental properties of CuSbSe₂ has been reported, such as defect physics, material, optical, and electrical properties, which are highly relevant for photovoltaic application. First, using density functional theory calculations, CuSbSe₂ is shown to have benign defect properties, i.e., free of recombination-center defects, and flexible defect and carrier concentration which can be tuned through the control of growth condition. Next, systematic material, optical, and electrical characterizations uncover many unexplored fundamental properties of CuSbSe₂ including band position, temperature-dependent band gap energy, Raman spectrum, and so on, thus providing a solid foundation for further photovoltaic research. Finally, a prototype CuSbSe₂-based thin film solar cell is fabricated by a hydrazine solution process. The systematic theoretical and experimental investigation, combined with the preliminary efficiency, confirms the great potential of CuSbSe₂ for thin-film solar cell applications.

The development of kesterite Cu₂ZnSn(S,Se)₄ thin-film solar cells is currently hindered by the large deficit of open-circuit voltage (V_oc), which results from the easy formation of Cu_Zn antisite acceptor defects. Suppressing the formation of Cu_Zn defects, especially near the absorber/buffer interface, is thus critical for the further improvement of kesterite solar cells. In this paper, it is shown that there is a large disparity between the defects in Cu- and Ag-based kesterite semiconductors, i.e., the Cu_Zn or Cu_Cd acceptor defects have high concentration and are the dominant defects in Cu₂ZnSn(S,Se)₄ or Cu₂CdSnS₄, but the Ag_Zn acceptor has only a low concentration and the dominant defects are donors in Ag₂ZnSnS₄. Therefore, the Cu-based kesterites always show p-type conductivity, while the Ag-based kesterites show either intrinsic or weak n-type conductivity. Based on this defect disparity and calculated band alignment, it is proposed that the V_oc limit of the kesterite solar cells can be overcome by alloying Cu₂ZnSn(S,Se)₄ with Ag₂ZnSn(S,Se)₄, and the composition-graded (Cu,Ag)₂ZnSn(S,Se)₄ alloys should be ideal light-absorber materials for achieving higher efficiency kesterite solar cells.

The kesterite-structured semiconductors Cu₂ZnSnS₄ and Cu₂ZnSnSe₄ are drawing considerable attention recently as the active layers in earth-abundant low-cost thin-film solar cells. The additional number of elements in these quaternary compounds, relative to binary and ternary semiconductors, results in increased flexibility in the material properties. Conversely, a large variety of intrinsic lattice defects can also be formed, which have important influence on their optical and electrical properties, and hence their photovoltaic performance. Experimental identification of these defects is currently limited due to poor sample quality. Here recent theoretical research on defect formation and ionization in kesterite materials is reviewed based on new systematic calculations, and compared with the better studied chalcopyrite materials CuGaSe₂ and CuInSe₂. Four features are revealed and highlighted: (i) the strong phase-competition between the kesterites and the coexisting secondary compounds; (ii) the intrinsic p-type conductivity determined by the high population of acceptor Cu_Zn antisites and Cu vacancies, and their dependence on the Cu/(Zn+Sn) and Zn/Sn ratio; (iii) the role of charge-compensated defect clusters such as [2Cu_Zn+Sn_Zn], [V_Cu+Zn_Cu] and [Zn_Sn+2Zn_Cu] and their contribution to non-stoichiometry; (iv) the electron-trapping effect of the abundant [2Cu_Zn+Sn_Zn] clusters, especially in Cu₂ZnSnS₄. The calculated properties explain the experimental observation that Cu poor and Zn rich conditions (Cu/(Zn+Sn) ≈ 0.8 and Zn/Sn ≈ 1.2) result in the highest solar cell efficiency, as well as suggesting an efficiency limitation in Cu₂ZnSn(S,Se)₄ cells when the S composition is high.