By scrutinizing the energy storage process in Li-ion batteries, tuning Li-ion migration behavior by atomic level tailoring will unlock great potential for pursuing higher electrochemical performance. Vacancy, which can effectively modulate the electrical ordering on the nanoscale, even in tiny concentrations, will provide tempting opportunities for manipulating Li-ion migratory behavior. Herein, taking CuGeO3 as a model, oxygen vacancies obtained by reducing the thickness dimension down to the atomic scale are introduced in this work. As the Li-ion storage progresses, the imbalanced charge distribution emerging around the oxygen vacancies could induce a local built-in electric field, which will accelerate the ions’ migration rate by Coulomb forces and thus have benefits for high-rate performance. Furthermore, the thus-obtained CuGeO3 ultrathin nanosheets (CGOUNs)/graphene van der Waals heterojunctions are used as anodes in Li-ion batteries, which deliver a reversible specific capacity of 1295 mAh g–1 at 100 mA g–1, with improved rate capability and cycling performance compared to their bulk counterpart. Our findings build a clear connection between the atomic/defect/electronic structure and intrinsic properties for designing high-efficiency electrode materials.Keywords: anode; CuGeO3; Li-ion migratory behavior; local electric field; oxygen vacancies;

The exploration of efficient nonprecious metal eletrocatalysis of the hydrogen evolution reaction (HER) is an extraordinary challenge for future applications in sustainable energy conversion. The family of first-row-transition-metal dichalcogenides has received a small amount of research, including the active site and dynamics, relative to their extraordinary potential. In response, we developed a strategy to achieve synergistically active sites and dynamic regulation in first-row-transition-metal dichalcogenides by the heterogeneous spin states incorporated in this work. Specifically, taking the metallic Mn-doped pyrite CoSe2 as a self-adaptived, subtle atomic arrangement distortion to provide additional active edge sites for HER will occur in the CoSe2 atomic layers with Mn incorporated into the primitive lattice, which is visually verified by HRTEM. Synergistically, the density functional theory simulation results reveal that the Mn incorporation lowers the kinetic energy barrier by promoting H–H bond formation on two adjacently adsorbed H atoms, benefiting H2 gas evolution. As a result, the Mn-doped CoSe2 ultrathin nanosheets possess useful HER properties with a low overpotential of 174 mV, an unexpectedly small Tafel slope of 36 mV/dec, and a larger exchange current density of 68.3 μA cm–2. Moreover, the original concept of coordinated regulation presented in this work can broaden horizons and provide new dimensions in the design of newly highly efficient catalysts for hydrogen evolution.

Defect engineering, at the core of the field of thermoelectric studies, serves as a scaffold for engineering the intrinsic electrons’ and phonons’ behaviors to tailor thermoelectric parameters through the direct impacts of band engineering and phonon engineering, which can modify electronic band structure and phonon transport behavior to enhance the power factor (PF = σS2) and reduce the lattice thermal conductivity (κl). By virtue of the implementation of defect engineering, the past decades have witnessed great progress in thermoelectric research through synergistic optimization of the inter-correlated transport parameters, and substantial enhancement has been achieved in the performance of various thermoelectric materials. However, current established optimization strategies based on defect engineering are mainly focused on tuning the electronic and phonon structures, while modulation by additional degrees of freedom caused by defects has long been neglected. In this Perspective, we focus on our interest in the under-exploited aspects of defect engineering, which include defect-related spin effects, defect-mediated atom or charge migration effects, and defect-related interface effects. Through these new points of view, we hope to arouse intense attention to the overlooked parts of defect engineering and combine them with current optimization strategies from the perspective of multiple degrees of freedom modulation, to enable the full potential of defect engineering for boosting thermoelectric performance. Finally, based on the discussion herein and current achievements in thermoelectric research, some personal perspectives on the future of this field are also presented.

On the road of innovation in modern information technology, resistive switching random access memory (RRAM) has been considered to be the best potential candidate to replace the conventional Si-based technologies. In fact, the key prerequisite of high storage density and low power consumption as well as flexibility for the tangible next generation of nonvolatile memories has stimulated extensive research into RRAM. Herein, we highlight an inorganic graphene analogue, ultrathin WO3·H2O nanosheets with only 2–3 nm thickness, as a promising material to construct a high performance and flexible RRAM device. The abundant vacancy associates in the ultrathin nanosheets, revealed by the positron annihilation spectra, act not only carrier reservoir to provide carriers but also capture center to trap the actived Cu2+ for the formation of conductive filaments, which synergistically realize the resistive switching memory with low operating voltage (+1.0 V/–1.14 V) and large resistance ON/OFF ratio (>105). This ultrathin-nanosheets-based RRAM device also shows long retention time (>105 s), good endurance (>5000 cycles), and excellent flexibility. The finding of the existence of distinct defects in ultrathin nanosheets undoubtedly leads to an atomic level deep understanding of the underlying nature of the resistive switching behavior, which may serve as a guide to improve the performances and promote the rapid development of RRAM.

Vacancy is a very important class of phonon scattering center to reduce thermal conductivity for the development of high efficient thermoelectric materials. However, conventional monovacancy may also act as an electron or hole acceptor, thereby modifying the electrical transport properties and even worsening the thermoelectric performance. This issue urges us to create new types of vacancies that scatter phonons effectively while not deteriorating the electrical transport. Herein, taking BiCuSeO as an example, we first reported the successful synergistic optimization of electrical and thermal parameters through Bi/Cu dual vacancies. As expected, as compared to its pristine and monovacancy samples, these dual vacancies further increase the phonon scattering, which results in an ultra low thermal conductivity of 0.37 W m–1 K–1 at 750 K. Most importantly, the clear-cut evidence in positron annihilation unambiguously confirms the interlayer charge transfer between these Bi/Cu dual vacancies, which results in the significant increase of electrical conductivity with relatively high Seebeck coefficient. As a result, BiCuSeO with Bi/Cu dual vacancies shows a high ZT value of 0.84 at 750 K, which is superior to that of its native sample and monovacancies-dominant counterparts. These findings undoubtedly elucidate a new strategy and direction for rational design of high performance thermoelectric materials.

Fabricating a flexible room-temperature ferromagnetic resistive-switching random access memory (RRAM) device is of fundamental importance to integrate nonvolatile memory and spintronics both in theory and practice for modern information technology and has the potential to bring about revolutionary new foldable information-storage devices. Here, we show that a relatively low operating voltage (+1.4 V/–1.5 V, the corresponding electric field is around 20 000 V/cm) drives the dual vacancies evolution in ultrathin SnO2 nanosheets at room temperature, which causes the reversible transition between semiconductor and half-metal, accompanyied by an abrupt conductivity change up to 103 times, exhibiting room-temperature ferromagnetism in two resistance states. Positron annihilation spectroscopy and electron spin resonance results show that the Sn/O dual vacancies in the ultrathin SnO2 nanosheets evolve to isolated Sn vacancy under electric field, accounting for the switching behavior of SnO2 ultrathin nanosheets; on the other hand, the different defect types correspond to different conduction natures, realizing the transition between semiconductor and half-metal. Our result represents a crucial step to create new a information-storage device realizing the reversible transition between semiconductor and half-metal with flexibility and room-temperature ferromagnetism at low energy consumption. The as-obtained half-metal in the low-resistance state broadens the application of the device in spintronics and the semiconductor to half-metal transition on the basis of defects evolution and also opens up a new avenue for exploring random access memory mechanisms and finding new half-metals for spintronics.

According to Yang Shao-Horn’s principle, CoSe2 is a promising candidate as an efficient, affordable, and sustainable alternative electrocatalyst for the oxygen evolution reaction, owing to its well-suited electronic configuration of Co ions. However, the catalytic efficiency of pure CoSe2 is still far below what is expected, because of its poor active site exposure yield. Herein, we successfully overcome the disadvantage of insufficient active sites in bulk CoSe2 by reducing its thickness into the atomic scale rather than any additional modification (such as doping or hybridizing with graphene or noble metals). The positron annihilation spectrometry and XAFS spectra provide clear evidence that a large number of VCo″ vacancies formed in the ultrathin nanosheets. The first-principles calculations reveal that these VCo″ vacancies can serve as active sites to efficiently catalyze the oxygen evolution reaction, manifesting an OER overpotential as low as 0.32 V at 10 mA cm–2 in pH 13 medium, which is superior to the values for its bulk counterparts as well as those for the most reported Co-based electrocatalysts. Considering the outstanding performance of the simple, unmodified ultrathin CoSe2 nanosheets as the only catalyst, further improvement of the catalytic activity is expected when various strategies of doping or hybridizing are used. These results not only demonstrate the potential of a notable, affordable, and earth-abundant water oxidation electrocatalyst based on ultrathin CoSe2 nanosheets but also open up a promising avenue into the exploration of excellent active and durable catalysts toward replacing noble metals for oxygen electrocatalysis.

The ability to suppress the recombination of the photoinduced charges is the key prerequisite for an excellent photocatalyst, which has attracted extensive and continuous interest in the field of photocatalysis. Herein, we presented a convenient strategy for the one-step selective synthesis of ultrathin BiOBr nanosheets with atomic thickness through a simple solvothermal method. These ultrathin BiOBr nanosheets not only show high exposure percentage of active (001) facets but also have an optimized band structure, which synergistically facilitates the electron–hole pair separation to realize significantly promoted visible-light photocatalytic activity. Our results provide a new avenue and direction for the design of photocatalysts with high visible-light photocatalytic performance.

The ability to suppress the recombination of the photoinduced charges is the key prerequisite for an excellent photocatalyst, which has attracted extensive and continuous interest in the field of photocatalysis. Herein, we presented a convenient strategy for the one-step selective synthesis of ultrathin BiOBr nanosheets with atomic thickness through a simple solvothermal method. These ultrathin BiOBr nanosheets not only show high exposure percentage of active (001) facets but also have an optimized band structure, which synergistically facilitates the electron–hole pair separation to realize significantly promoted visible-light photocatalytic activity. Our results provide a new avenue and direction for the design of photocatalysts with high visible-light photocatalytic performance.