•Crack initiation was attributed to mechanical vibrations.•Thermal stress would encourage crack propagation.•The reinforced PCB holder is very helpful for vibration response relief.The microstructures and crack propagation behavior of CCGA (ceramic column grid array) solder joints after sinusoidal vibration loading, random vibration loading, and thermal cycling test have been discussed in this study. The failure mechanism of solder joints was analyzed using an experimental method and finite element analysis. It was found that the failed solder joints mainly distributed at the peripheral area in the solder column arrays and the crack initiation was mainly caused by mechanical vibrations. The deformation of PCB (printed circuit board) introduced by mechanical vibrations brought the outermost solder columns in CCGA devices with significant stress concentration and induced the initiation of cracks. Furthermore, cracks propagated during the process of mechanical vibrations and thermal cycling. The cracks propagated rapidly and the solder joints finally failed. The structure of the PCB holder was improved to relieve the vibration response from the peripheral joints. No visible crack was found in the solder joints after the same mechanical vibrations and thermal cycling test. The reliability of solder joints have been greatly improved with the new PCB holder.

The small outline transistor (SOT) devices which were interconnected with 20 μm copper bonding wire and encapsulated with commercial epoxy molding compound (EMC) have been used in a series of reliability tests which including the thermal shock test, the electrical service life test, and the isothermal aging test. Isolated IMC spots were found at the bonding interface during the thermal shock test. No void or crack was observed even after 1500 cycles thermal shock test. No electrical failure was happened. The isolated IMC spots also occurred at the Cu/Al bonds interface after 500 h electrical operation. After 1000 h electrical operation, the sizes of the IMC spots were about 0.5 μm. No layered IMC was observed. The IMCs were formed at the bonding interface when the aging temperature was between 150 °C and 250 °C. Micro cracks and Kirkendall voids were observed with the aging time of 9 days at 200 °C and the aging time of 9 h at 250 °C. The minor element in the EMC, Sb, has reacted with Cu wire and Cu bond surface at 250 °C when the aging time was more than 16 h. Cu3Sb was the main product of the diffusion reaction. With the aging time of more than 49 h, the Cu wire was crashed into pieces and the Cu bond periphery has been severely corroded.

Copper wires are increasingly used in place of gold wires for making bonded interconnections in microelectronics. There are many potential benefits for use of copper in these applications, including better electrical and mechanical properties, and lower cost. Usually, wires are bonded to aluminum contact pads. However, the growth of Cu/Al intermetallic compounds (IMC) at the wire/pad interfaces is poorly understood, and if excessive would increase the contact resistance and degrade the bond reliability.To study the Cu/Al IMC growth in Cu ball bonds, high temperature aging at 250 °C for up to 196 h has been used to accelerate the aging process of the bonds. The Cu/Al IMCs growth behavior was then recorded and the IMC formation rate of 6.2 ± 1.7 × 10−14 cm2/s was obtained. In addition to the conventional yz-plane cross-section perpendicular to the bonding interface, a xy-plane cross-section parallel through the interfacial layers is reported. Three IMC layers were distinguished at the Cu/Al interfaces by their different colors under optical microscopy on the xy-plane cross-sections of ball bonds. The results of micro-XRD analysis confirmed that Cu9Al4, and CuAl2 were the main IMC products, while a third phase is found which possibly is CuAl. During the aging process, IMC film growth starts from the periphery of the bond and propagates inward towards the centre area. Subsequently, with increased aging time, cavities are observed to develop between the IMC layer and the Cu ball surface, also starting at the bond periphery. The cavitation eventually links up and progresses toward the centre area leading to a nearly complete fracture between the ball and the intermetallic layer, as observed after 81 h.