Nanogermanium is a material that has great potential for technological applications, and doped and alloyed Ge nanocrystals (NCs) are actively being considered. New alloys and compositions are possible in colloidal synthesis because the reactions are kinetically rather than thermodynamically controlled. Most of the Group V elements have been shown to be n-type dopants in Ge to increase carrier concentration; however, thermodynamically, Bi shows no solubility in crystalline Ge. Bi-doped Ge NCs were synthesized for the first time in a microwave-assisted solution route. The oleylamine capping ligand can be replaced by dodecanethiol without loss of Bi. A positive correlation between the lattice parameter and the concentration of Bi content (0.5–2.0 mol %) is shown via powder X-ray diffraction and selected area electron diffraction. X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning TEM, and inductively coupled plasma–mass spectroscopy are consistent with the Bi solubility up to 2 mol %. The NC size increases with increasing amount of bismuth iodide employed in the reaction. Absorption data show that the band gap of the Bi-doped Ge NCs is consistent with the NC size. This work shows that a new element can be doped into Ge NCs via a microwave-assisted route in amounts as high as 1–2 mol %, which leads to increased carriers. Colloidal chemistry provides an inroad to new materials not accessible via other means.

Water-soluble poly(allylamine) Mn2+-doped Si (SiMn) nanoparticles (NPs) were prepared and show promise for biologically related applications. The nanoparticles show both strong photoluminescence and good magnetic resonance contrast imaging. The morphology and average diameter were obtained through transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM); spherical crystalline Si NPs with an average diameter of 4.2 ± 0.7 nm were observed. The doping maximum obtained through this process was an average concentration of 0.4 ± 0.3% Mn per mole of Si. The water-soluble SiMn NPs showed a strong photoluminescence with a quantum yield up to 13%. The SiMn NPs had significant T1 contrast with an r1 relaxivity of 11.1 ± 1.5 mM–1 s–1 and r2 relaxivity of 32.7 ± 4.7 mM–1 s–1 where the concentration is in mM of Mn2+. Dextran-coated poly(allylamine) SiMn NPs produced NPs with T1 and T2 contrast with a r1 relaxivity of 27.1 ± 2.8 mM–1 s–1 and r2 relaxivity of 1078.5 ± 1.9 mM–1 s–1. X-band electron paramagnetic resonance spectra are fit with a two-site model demonstrating that there are two types of Mn2+ in these NP’s. The fits yield hyperfine splittings (A) of 265 and 238 MHz with significant zero field splitting (D and E terms). This is consistent with Mn in sites of symmetry lower than tetrahedral due to the small size of the NP’s.

Quantum dots (QDs) are an attractive platform for building multimodality imaging probes, but the toxicity for typical cadmium QDs limits enthusiasm for their clinical use. Nontoxic, silicon QDs are more promising but tend to require short-wavelength excitations which are subject to tissue scattering and autofluorescence artifacts. Herein, we report the synthesis of paramagnetic, manganese-doped, silicon QDs (SiMn QDs) and demonstrate that they are detectable by both MRI and near-infrared excited, two-photon imaging. The SiMn QDs are coated with dextran sulfate to target them to scavenger receptors on macrophages, a biomarker of vulnerable plaques. TEM images show that isolated QDs have an average core diameter of 4.3 ± 1.0 nm and the hydrodynamic diameters of coated nanoparticles range from 8.3 to 43 nm measured by dynamic light scattering (DLS). The SiMn QDs have an r1 relaxivity of 25.50 ± 1.44 mM−1 s−1 and an r2 relaxivity of 89.01 ± 3.26 mM−1 s−1 (37 °C, 1.4 T). They emit strong fluorescence at 441 nm with a quantum yield of 8.1% in water. Cell studies show that the probes specifically accumulate in macrophages by a receptor-mediated process, are nontoxic to mammalian cells, and produce distinct contrast in both T1-weighted magnetic resonance and single- or two-photon excitation fluorescence images. These QDs have promising diagnostic potential as high macrophage density is associated with atherosclerotic plaques vulnerable to rupture.

Zintl phases Yb14MnSb11 and Yb14MgSb11, which share the same complex structure type, have been demonstrated as the best p-type thermoelectric materials for the high temperature region (800–1200 K). A new iso-structural compound, Yb14MgBi11, was synthesized in order to investigate the structure and thermoelectric properties of the Bi analogs. Yb14MgBi11 crystallizes in the Ca14AlSb11 structure-type with the space group I41/acd [a = 16.974(2) Å, c = 22.399(4) Å, V = 6454(2) Å3, R1/wR2 = 0.0238/0.0475]. The structure follows the previous description of this structure type and the trend observed in previous analogs. Thermoelectric properties of Yb14MgBi11 are measured together with Yb14MnBi11 and both compounds are metallic. Compared to Yb14MgSb11, Yb14MgBi11 has a higher carrier concentration with a similar mobility and effective mass. The lattice thermal conductivity of Yb14MgBi11 is extremely low, which is as low as 0.16–0.36 W(mK)−1. The zT values of Yb14MgBi11 and Yb14MnBi11 reach 0.2 at 875 K.

Single crystals of Yb14-xRExMnSb11 (0 < x < 0.6, RE = Pr, Nd, Sm, and Gd) were synthesized by Sn flux. The compounds are iso-structural with Ca14AlSb11 (I41/acd), and their compositions were determined by wavelength-dispersive spectroscopy. Yb14MnSb11 is described as a partially screened d-metal Kondo system with the isolated [MnSb4]9– tetrahedral cluster having a d5 + hole configuration that results in four unpaired electrons measured in the ferromagnetically ordered phase. All of the Yb atoms in Yb14MnSb11 are present as Yb2+, and the additional RE in Yb14-xRExMnSb11 is trivalent, contributing one additional electron to the structure and altering the magnetic properties. All compounds show ferromagnetic ordering in the range of 39–52 K attributed to the [MnSb4]9– magnetic moment. Temperature-dependent DC magnetization measurements of Yb14-xPrxMnSb11 (0.44 ≤ x ≤ 0.56) show a sharp downturn right below the ferromagnetic transition temperature. Single-crystal neutron diffraction shows that this downturn is caused by a spin reorientation of the [MnSb4]9– magnetic moments from the ab-plane to c-axis. The spin reorientation behavior, caused by large anisotropy, is also observed for similar x values of RE = Nd but not for RE = Sm or Gd at any value of x. In Pr-, Nd-, and Sm-substituted crystals, the saturation moments are consistent with ∼4 unpaired electrons attributed to [MnSb4]9–, indicating that local moments of Pr, Nd, and Sm do not contribute to the ferromagnetic order. In the case of RE = Pr, this is confirmed by neutron diffraction. In contrast, the magnetic measurements of RE = Gd show that the moments of Gd ferromagnetically order with the moments of [MnSb4]9–, and reduced screening of moments on Mn2+ is evident. The sensitive variation of magnetic behavior is attributed to the various RE substitutions resulting in different interactions of the 4f-orbitals with the 3d-orbitals of Mn in the [MnSb4]9– cluster conducted through 5p-orbitals of Sb.

The thermal stability and thermoelectric properties of type I clathrate K8Al8Si38 up to 873 K are reported. K8Al8Si38 possesses a high absolute Seebeck coefficient value and high electrical resistivity in the temperature range of 323 to 873 K, which is consistent with previously reported low temperature thermoelectric properties. Samples with Ba partial substitution at the K guest atom sites were synthesized from metal hydride precursors. The samples with the nominal chemical formula of K8–xBaxAl8+xSi38–x (x = 1, 1.5, 2) possess type I clathrate structure (cubic, Pm3̅n), confirmed by X-ray diffraction. The guest atom site occupancies and thermal motions were investigated with Rietveld refinement of synchrotron powder X-ray diffraction. Transport properties of Ba-containing samples were characterized from 2 to 300 K. The K–Ba alloy phases showed low thermal conductivity and improved electrical conductivity compared to K8Al8Si38. Electrical resistivity and Seebeck coefficients were measured over the temperature range of 323 to 873 K. Thermal conductivity from 323 to 873 K was estimated from the Wiedemann–Franz relation and lattice thermal conductivity extrapolation from 300 to 873 K. K8–xBaxAl8+xSi38–x (x = 1, 1.5) synthesized with Al deficiency showed enhanced electrical conductivity, and the absolute Seebeck coefficients decrease with the increased carrier concentration. When x = 2, the Al content increases toward the electron balanced composition, and the electrical resistivity increases with the decreasing charge carrier concentration. Overall, K6.5Ba1.5Al9Si37 achieves an enhanced zT of 0.4 at 873 K.

Eu11–xYbxCd6Sb12 Zintl solid solutions have been prepared by tin flux reaction by employing the elements Eu/Yb/Cd/Sb/Sn in the ratio 11 – xp:xp:6:12:30, where xp is an integer less than 11 representing the preparative amount of Eu (11 – xp) and Yb (xp). Efforts to make the Yb compositions for x exceeding ∼3 resulted in structures other than the Sr11Cd6Sb12 structure type. The crystal structures and compositions were determined by single-crystal and powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58), and the lattice parameters decrease with increasing ytterbium content. Single crystal X-ray diffraction shows that Yb atoms are not randomly distributed in the Eu sites but have a site preference which can be attributed to size effects. The influence of the rare earth (RE) metal sites on thermal and electronic properties of RE11Cd6Sb12 solid solutions has been studied by measuring their thermoelectric properties from 5 to 300 K after consolidation by either spark plasma sintering (SPS) or hot pressing (HP). Electron microprobe analysis reveals that some of the rare earth metal is lost during SPS; as a result pellets formed through SPS have lower electrical resistivity by an order of magnitude due to increased hole-charge carrier concentrations. While the carrier concentration increases, the mobility decreases due to deficiencies in Eu content. Refinement of powder X-ray diffraction shows that Eu loss is mainly from the Eu1 crystallographic site, which has a unique coordination suggesting that this site plays a key role in the transport properties of RE11Cd6Sb12.

Herein we report the electroless deposition of Ge onto sacrificial Ag nanoparticle (NP) templates to form hollow Ge NPs. The formation of AgI is a necessary component for this reaction. Through a systematic study of surface passivating ligands, we determined that tri-n-octylphosphine is necessary to facilitate the formation of hollow Ge NPs by acting as a transport agent for GeI2 and the oxidized Ag+ cation (i.e., AgI product). Annular dark-field (ADF) scanning transmission electron microscopy (STEM) imaging of incomplete reactions revealed Ag/Ge core/shell NPs; in contrast, completed reactions displayed hollow Ge NPs with pinholes which is consistent with the known method for dissolution of the nanotemplate. Characterization of the hollow Ge NPs was performed by transmission electron microscopy, ADF-STEM, energy-dispersive X-ray spectroscopy, UV–vis spectrophotometry, and Raman spectroscopy. The galvanic replacement reaction of Ag with GeI2 offers a versatile method for controlling the structure of Ge nanomaterials.Keywords: electroless deposition; galvanic replacement; germanium nanoparticles; hollow; silver nanoparticles

Magnesium-containing Zintl phase compounds Yb14MgSb11 and Ca14MgSb11 have been prepared by annealing the mixture of the elements at 1075–1275 K. These compounds are isostructural with the Zintl compound Ca14AlSb11 and crystallize in the tetragonal space group I41/acd (Z = 8). Single-crystal X-ray data (90 K) were refined for Yb14MgSb11 [a = 16.625(9) Å, c = 22.24(2) Å, V = 6145(8) Å3, and R1/wR2 (0.0194/0.0398)] and Ca14MgSb11 [a = 16.693(2) Å, c = 22.577(5) Å, V = 6291(2) Å3, R1/wR2 (0.0394/0.0907)]. This structure type has been shown to be highly versatile with a large number of phases with the general formula A14MPn11 (A = Ca, Sr, Ba, Yb, Eu; M = Mn, Zn, Nb, Cd, Group 13 elements; Pn = Group 15 elements). The two compounds reported in this paper are the first Mg-containing analogs. Replacing M with Mg, which is divalent with no d-orbitals, probes electronic structure and properties of this structure type. Mg2+ is well-known to prefer tetrahedral geometry and allows for integration of the properties of a main group analog isoelectronic to the transition metal (Mn2+) containing compounds of this structure type. Thermoelectric properties of both compounds were measured from room temperature to 1075 K on fully dense pellets. Yb14MgSb11 shows metallic behavior, whereas Ca14MgSb11 is a semiconductor with a much larger electrical resistivity. The figure of merit reaches 0.32 for Ca14MgSb11 at 1075 K, and 1.02 at 1075 K for Yb14MgSb11, which is a 45% improvement over the reported zT1075K of Yb14MnSb11 prepared from Sn-flux. Density functional band structure calculations on Ca14MgSb11 yield p-type materials with a band gap of ∼0.6 eV and shows Ca and Sb 5p orbitals contributes to the top of valence band. The electron localization function calculations show that Mg and Sb are covalently bonded in MgSb49– and that the bonding of Sb37– can be considered as a hypervalent 3c–4e bond.

A series of alkali metal containing compounds with type I clathrate structure, A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38, were synthesized and characterized. Room temperature lattice parameters of A8Ga8Si38 (A = K, Rb, Cs) and K8Al8Si38 were determined to be 10.424916(10), 10.470174(13), 10.535069(15), and 10.48071(2) Å, respectively. The type I clathrate structure (cubic, Pm3̅n) was confirmed for all phases, and in the case of K8Al8Si38 and K8Ga8Si38, the structures were also refined using synchrotron powder diffraction data. The samples were consolidated by Spark Plasma Sintering (SPS) for thermoelectric property characterization. Electrical resistivity was measured by four probe AC transport method in the temperature range of 30 to 300 K. Seebeck measurements from 2 to 300 K were consistent with K8Al8Si38 and K8Ga8Si38 being n-type semiconductors, while Rb8Ga8Si38 and Cs8Ga8Si38 were p-type semiconductors. K8Al8Si38 shows the lowest electrical resistivity and the highest Seebeck coefficient. This phase also showed the largest thermal conductivity at room temperature of ∼1.77 W/Km. K8Ga8Si38 provides the lowest thermal conductivity, below 0.5 W/Km, comparable to the type I clathrate with heavy elements such as Ba8Ga16Ge30. Surface photovoltage spectroscopy on films shows that these compounds are semiconductors with band gaps in the range 1.14 to 1.40 eV.

Solid-solution Zintl compounds with the formula Eu11Cd6–xZnxSb12 have been synthesized from the elements as single crystals using a tin flux according to the stoichiometry Eu:Cd:Zn:Sb:Sn of 11:6–xp:xp:12:30 with xp = 0, 1, 2, 3, 4, 5, and 6, where xp is the preparative amount of Zn employed in the reaction. The crystal structures and the compositions were established by single-crystal as well as powder X-ray diffraction and wavelength-dispersive X-ray analysis measurements. The title solid-solution Zintl compounds crystallize isostructurally in the centrosymmetric monoclinic space group C 2/m (No. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). There is a miscibility gap at 3 ≤ xp ≤ 4 where the major product crystallizes in a disordered structure related to the Ca9Mn4Bi9 structure type; otherwise, for all other compositions, the Sr11Cd6Sb12 structure is the majority phase. Eu11Cd6Sb12 shows lower lattice thermal conductivity relative to Eu11Zn6Sb12 consistent with its higher mean atomic weight, and as anticipated, the solid-solution samples of Eu11Cd6–xZnxSb12 have effectively reduced lattice thermal conductivities relative to the end member compounds. Eu11.0(1)Cd4.5(2)Zn1.5(2)Sb12.0(1) exhibits the highest zT value of >0.5 at around 800 K which is twice as large as the end member compounds.

Compounds of the Yb14MnSb11 structure type are the highest efficiency bulk p-type materials for high temperature thermoelectric applications, with reported figures of merit (ZTs) as high as ∼1.3 at 1275 K. Further optimization of ZT for this structure type is possible with the development of a simple synthetic route. However, this has been difficult to achieve because of the small amount of Mn required compared with Yb and Sb. A simple synthetic route for Yb14MnSb11 has been developed utilizing a combination of ball milling and annealing to produce phase-pure material followed by spark plasma sintering for consolidation. The materials have been characterized by powder X-ray diffraction before and after spark plasma sintering. The stoichiometric reaction of Yb, Sb, and MnSb provides phase-pure powder by X-ray diffraction. Upon cycling to temperatures greater than 1272 K, Yb14MnSb11 shows the presence of Yb11Sb10. Additional samples with 5% and 10% excess Mn were also investigated. Adding 5–10% excess Mn does not change the low temperature properties and improves the high temperature ZT, resulting in a ZT of 1.1–1.2 at 1000 K for Yb14Mn1.05Sb11, 30–40% improvement over that of the Sn flux reaction. The increase in ZT is attributed to optimization of the carrier concentration. These results provide a reliable method of bulk synthesis of this Zintl phase and open the way for discovery of new compounds with potential for even higher ZT.

The synthesis and transport properties of the family of coinage metal-stuffed Zintl compounds, Eu9Cd4–xCM2+x–y□ySb9 (CM = coinage metal, □ = vacancies), is presented as a function of coinage metal substitution. Eu9Cd4–xCM2+x–y□ySb9 compounds are shown to be rare examples of metallic Zintl phases with low thermal conductivities. While the lattice thermal conductivity is low, which is attributed to the complex structure and presence of interstitials, the electronic contribution to thermal conductivity is also low. In these p-type compounds, the carriers transmit less heat than expected, based on the Wiedemann–Franz law and metallic conduction, κe = L0T/ρ. Density functional theory (DFT) calculations indicate that the Fermi level resides in a pseudo-gap, which is consistent with the metallic description of the properties. While the contribution from the interstitial CM states to the Fermi level is small, the interstitial CMs are required to tune the position of the Fermi level. Analysis of the topology of electron localization function (ELF) basins reveals the multicenter Eu−Cd(CM)−Sb interactions, as the Eu and Sb states have the largest contribution at the top of the valence band. Regardless of the success of the Zintl concept in the rationalization of the properties, the representation of the CM-stuffed Eu9Cd4Sb9 structure as Eu cations encapsulated into a polyanionic (Cd/Cu)Sb network is oversimplified and underestimates the importance of the Eu–Sb bonding interactions. These results provide motivation to search for more efficient thermoelectric materials among complex metallic structures that can offer less electronic thermal conductivity without deteriorating the electrical conductivity.

After the discovery of Yb14MnSb11 as an outstanding p-type thermoelectric material for high temperatures (≥900 K), site substitution of other elements has been proven to be an effective method to further optimize the thermoelectric properties. Yb14−xRExMnSb11 (RE = Pr and Sm, 0 < x < 0.55) compounds were prepared by powder metallurgy to study their thermoelectric properties. According to powder X-ray diffraction, these samples are iso-structural with Yb14MnSb11 and when more than 5% RE is used in the synthesis the presence of (Yb,RE)4Sb3 is apparent after synthesis. After consolidation and measurement, (Yb,RE)Sb and (Yb,RE)11Sb10 appear in the powder X-ray diffraction patterns. Electron microprobe analysis results show that consolidated pellets have small (Yb,RE)Sb domains and that the maximum amount of RE in Yb14−xRExMnSb11 is x = 0.55, however, (Yb,RE)11Sb10 cannot be distinguished by electron microprobe analysis. By replacing Yb2+ with RE3+, one extra electron is introduced into Yb14MnSb11 and the carrier concentration is adjusted. Thermoelectric performance from room temperature to 1275 K was evaluated through transport and thermal conductivity measurements. The measurement shows that Seebeck coefficients initially increase and then remain stable and that electrical resistivity increases with substitutions. Thermal conductivity is slightly reduced. Substitution of Pr and Sm leads to enhanced zT. Yb13.82Pr0.18Mn1.01Sb10.99 has the best maximum zT value of ∼1.2 at 1275 K, while Yb13.80Sm0.19Mn1.00Sb11.02 has its maximum zT of ∼1.0 at 1275 K, respectively, ∼45% and ∼30% higher than Yb14MnSb11 prepared in the same manner.

The synthesis, crystal structure, magnetic properties, and europium Mössbauer spectroscopy of the new members of the 9–4–9 Zintl family of Eu9Cd4–xCM2+x–y□ySb9 (CM = coinage metal: Au, Ag, and Cu) are reported. These compounds crystallize in the Ca9Mn4Bi9 structure type (9–4–9) with the 4g interstitial site almost half-occupied by coinage metals; these are the first members in the 9–4–9 family where the interstitial positions are occupied by a monovalent metal. All previously known compounds with this structure type include divalent interstitials where these interstitials are typically the same as the transition metals in the anionic framework. Single-crystal magnetic susceptibility data indicate paramagnetic behavior for all three compounds with antiferromagnetic ordering below 10 K (at 100 Oe) that shifts to lower temperature (<7 K) by applying a 3 T magnetic field. 151Eu Mössbauer spectra were collected on polycrystalline powder samples of Eu9Cd4–xCM2+x–y□ySb9 at 50 and 6.5 K in order to evaluate the valence of Eu cations. Although the Zintl formalism states that the five crystallographically distinct Eu sites in Eu9Cd4–xCM2+x–y□ySb9 should bear Eu2+, the Mössbauer spectral isomer shifts are clearly indicative of both 2+ and 3+ valence of the Eu cations with the Cu- and Au-containing compounds showing higher amounts of Eu3+. This electronic configuration leads to an excess of negative charge in these compounds that contradicts the expected valence-precise requirement of Zintl phases. The spectra obtained at 6.5 K reveal magnetic ordering for both Eu2+ and Eu3+. The field dependence of Eu2+ indicates two distinct magnetic sublattices, with higher and lower fields, and of a small field for Eu3+. The site symmetry of the five Eu sites is not distinguishable from the Mössbauer data.

The Zintl phases with nominal compositions Na4Si4, Rb7NaSi8, and A12Si17 (A = K, Rb, Cs) were utilized as precursors in the synthesis of silicon nanoparticles (Si NPs). The present study characterizes and compares the yields of Si NPs synthesized from Na4Si4, Rb7NaSi8, and A12Si17 (A = K, Rb, Cs). Na4Si4 and Rb7NaSi8 Zintl phases consist of anionic silicon tetrahedra stabilized by group I cations. The A12Si17 (A = K, Rb, Cs) Zintl phases that contain [Si9]4– and [Si4]4– clusters have been speculated to be more soluble than the A4Si4 (A = Na, Rb, Cs) Zintl phases that contain solely [Si4]4– clusters due to the lower charge density of the [Si9]4– cluster. The Zintl phases were reacted with NH4Br in dimethylformamide (DMF) and subsequently capped with allylamine. The Si NPs were characterized by transmission electron microscopy (TEM), energy-dispersive spectroscopy (EDS), UV–vis, and photoluminescence (PL) spectrophotometry. Furthermore, the Si yields were characterized by inductively coupled plasma mass spectrometry (ICP-MS) to evaluate if the reactions of [Si9]4– cluster containing Zintl phases resulted in higher yields of Si NPs. The yield of Si increased with larger or mixed alkali metal Zintl phases, leading to the conclusion that Coulombic interactions between the cations and anions affect the Zintl phase’s reactivity. The size of the Si NPs also increased with larger and mixed alkali metal cations, resulting in similar NP concentrations regardless of the starting material. With respect to ease of synthesis and yield, Na4Si4 remains the most practical precursor for the solution synthesis of Si NPs; however, the larger and mixed alkali metal precursors show promise for further development.

A novel Zintl phase structure type, Eu7Cd4Sb8–xAsx (x = 2, 3, 4, and 5), with the general formula Eu7Cd4Pn8 (Pn = mixed occupancy Sb and As), was synthesized by molten tin flux reaction. Its structure was determined using single-crystal X-ray diffraction methods. This structure type is only preserved for 2 ≤ x ≤ 5 under our experimental conditions, and efforts to synthesize samples with x < 2 or x > 5 resulted in other structure types. The mixed occupancy Sb and As can be thought of as a pseudoatom whose ideal size, in this range of Sb/As ratios, fits the structure. The title phase crystallizes in the I-centered monoclinic space group I2/m (No. 12, Z = 4) with unit cell parameters ranging as follows: a = 19.7116(17)–19.4546(13) Å, b = 4.6751(4)–4.6149(3) Å, c = 24.157(2)–23.871(15) Å, and β = 95.8798(1)–96.016(5)°, depending on the Sb/As ratio. The structure can be described as parallel double pentagonal tubes resulting from Cd–Pn and Pn–Pn bonding. These double pentagons are formed through corner sharing of the Cd-centered CdPn4 tetrahedra and a Pn–Pn interaction from two adjacent CdPn4 tetrahedra. This structure type is closely related to the Sr11Cd6Sb12 structure type as both share the same bonding features of Pn–Pn bonding and double pentagonal tubes. Electron microprobe analysis confirms the composition of these new Zintl solid solution phases. The As exhibits preferential substitution on specific sites, and site specificity trends are supported by lowest energy models from theoretical calculations. Theoretical calculations also predict that Sb-rich compounds should be metallic or semimetallic and that they should become more insulating as As content increases. Members of the solid-solution order ferromagnetically between 5 and 6 K and exhibit relatively low electrical resistivity between 50 and 300 K, ranging from ∼0.57 to ∼26 mΩ·cm, increasing with increasing As content.

Inorganic semiconductor nanoparticles are of significant interest for applications that benefit from their size-dependent properties. The work presented here focuses on the characterization of solution-based microwave synthesized Ge nanocrystals (NCs). Three differently capped Ge NCs were investigated: oleylamine (OAM), dodecanethiol (DDT), and a functionalized N4,N4,N4′,N4′-tetraphenylbiphenyl-4,4′-diamine (TPD) ligand, which is commonly used as hole-transporting units. The optical gaps followed the expected trend for quantum confinement; however, the absolute value depended upon the ligand. We found that the DDT-capped Ge NCs feature consistently larger bandgaps than OAM-capped Ge NCs of a similar size. Cyclic voltammetry (CV) was used to determine the valence band energy for OAM-capped Ge NCs, and the conduction band energy was estimated from the optical gap. By contrast, DDT-capped Ge NCs and the OAM/DDT-capped Ge NCs did not exhibit an oxidative signal in the cyclic voltammetry. This was attributed to the removal of surface defects of OAM-capped Ge NCs through stronger Ge–S surface bonds. TPD-capped Ge NCs were investigated and showed a shift to slightly higher oxidation potential compared with the free ligand and bandgap values in between that of the OAM-capped and DDT-capped Ge NCs. The higher oxidation potential is attributed to TPD orientation, and the bandgap value reflects the lower number of Ge–S bonds on the surface due to ligand sterics.

Creating allotropes and polymorphs of nanoparticles (NPs) has gained tremendous momentum in recent times. Group 14 (C, Si, Ge) has a number of allotropes; some with significant applications. Here we report the synthesis of Si NPs crystallizing in the BC8 structure via a colloidal route for the first time. The BC8 structure is a metastable structure of Si that can be accessed from the β-Sn form through the release of high pressure. These Si BC8 structured NPs were synthesized via reduction of SiI4 with n-butyllithium, capped with octanol and precipitated from solution. The transmission electron microscopy lattice fringes as well as the selected area electron diffraction pattern of the precipitate are consistent with the BC8 structure. The LeBail whole profile fitting of powder X-ray diffraction data also confirms the structure as the BC8 phase. The Raman spectrum provides further evidence to support the BC8 structure. With proper tuning of the band gap these NPs could be potential candidates for solar cells.

We have developed a fast, easy, and scalable synthesis method for Ba1–xKxFe2As2 (0 ≤ x ≤ 1) superconductors using hydrides BaH2 and KH as a source of barium and potassium metals. Synthesis from hydrides provides better mixing and easier handling of the starting materials, consequently leading to faster reactions and/or lower synthesis temperatures. The reducing atmosphere provided by the evolved hydrogen facilitates preparation of oxygen-free powders. By a combination of methods we have shown that Ba1–xKxFe2As2 obtained via hydride route has the same characteristics as when it is prepared by traditional solid-state synthesis. Refinement from synchrotron powder X-ray diffraction data confirms a linear dependence of unit cell parameters upon K content as well as the tetragonal to orthorhombic transition at low temperatures for compositions with x < 0.2. Magnetic measurements revealed dome-like dependence of superconducting transition temperature Tc upon K content with a maximum of 38 K for x close to 0.4. Electron diffraction and high-resolution high-angle annular dark-field scanning transmission electron microscopy indicates an absence of Ba/K ordering, while local inhomogeneity in the Ba/K distribution takes place at a scale of several angstroms along [110] crystallographic direction.

Zintl phases are compounds that have shown promise for thermoelectric applications. The title solid–solution Zintl compounds were prepared from the elements as single crystals using a tin flux for compositions x = 0, 1, 2, and 3. Eu11Cd6Sb12–xAsx (x < 3) crystallize isostructurally in the centrosymmetric monoclinic space group C2/m (no. 12, Z = 2) as the Sr11Cd6Sb12 structure type (Pearson symbol mC58). Efforts to make the As compositions for x exceeding ∼3 resulted in structures other than the Sr11Cd6Sb12 structure type. Single-crystal X-ray diffraction indicates that As does not randomly substitute for Sb in the structure but is site specific for each composition. The amount of As determined by structural refinement was verified by electron microprobe analysis. Electronic structures and energies calculated for various model structures of Eu11Cd6Sb10As2 (x = 2) indicated that the preferred As substitution pattern involves a mixture of three of the six pnicogen sites in the asymmetric unit. In addition, As substitution at the Pn4 site opens an energy gap at the Fermi level, whereas substitution at the other five pnicogen sites remains semimetallic with a pseudo gap. Thermoelectric properties of these compounds were measured on hot-pressed, fully densified pellets. Samples show exceptionally low lattice thermal conductivities from room temperature to 775 K: 0.78–0.49 W/mK for x = 0; 0.72–0.53 W/mK for x = 1; and 0.70–0.56 W/mK for x = 2. Eu11Cd6Sb12 shows a high p-type Seebeck coefficient (from +118 to 153 μ V/K) but also high electrical resistivity (6.8 to 12.8 mΩ·cm). The value of zT reaches 0.23 at 774 K. The properties of Eu11Cd6Sb12–xAsx are interpreted in discussion with the As site substitution.

Applications of Ge nanocrystals (NCs) are limited by the stability and air reactivity of the Ge surface. In order to promote stability and increase the diversity of ligand functionalization of Ge NCs, the preparation of thiol-passivated Ge NCs via a ligand exchange process was investigated. Herein a successful replacement of oleylamine ligands on the surface of Ge NCs with dodecanethiol is reported. The successful ligand exchange was monitored by FTIR and NMR spectroscopy and it was found that dodecanethiol provided a better surface coverage, leading to stable Ge NC dispersions. Dodecanethiol capping also enabled band gap determination of the NCs by surface photovoltage (SPV) spectroscopy. The SPV measurements indicated an efficient charge separation in the ligand-exchanged Ge NCs. On the other hand, oleylamine-terminated Ge NCs of similar sizes exhibited a very small photovoltage, indicating a poorly passivated surface.

A thermochemical study of three germanium allotropes by differential scanning calorimetry (DSC) and oxidative high-temperature drop solution calorimetry with sodium molybdate as the solvent is described. Two allotropes, microcrystalline allo-Ge (m-allo-Ge) and 4H-Ge, have been prepared by topotactic deintercalation of Li7Ge12 with methanol (m-allo-Ge) and subsequent annealing at 250 °C (4H-Ge). Transition enthalpies determined by differential scanning calorimetry amount to 4.96(5) ± 0.59 kJ/mol (m-allo-Ge) and 1.46 ± 0.55 kJ/mol (4H-Ge). From high-temperature drop solution calorimetry, they are energetically less stable by 2.71 ± 2.79 kJ/mol (m-allo-Ge) and 5.76 ± 5.12 kJ/mol (4H-Ge) than α-Ge, which is the stable form of germanium under ambient conditions. These data are in agreement with DSC, as well as with the previous quantum chemical calculations. The morphology of the m-allo-Ge and 4H-Ge crystallites was investigated by a combination of scanning electron microscopy, transmission electron microscopy, and atomic force microscopy. Even though the crystal structures of m-allo-Ge and 4H-Ge cannot be considered as truly layered, these phases retain the crystalline morphology of the layered precursor Li7Ge12. Investigation by diffuse reflectance infrared Fourier transform spectroscopy and UV–vis diffuse reflectance measurements reveal band gaps in agreement with quantum chemical calculations.

A facile size-controlled synthesis (microwave/conventional) of quasi-spherical germanium nanoparticles is reported. Oleylamine serves as a solvent, a binding ligand, and a reducing agent in the synthesis. Reactions were carried out with microwave-assisted heating, and the results have been compared with those produced by conventional heating. Germanium iodides (GeI4, GeI2) were used as the Ge precursor, and size control in the range of 4–11 nm was achieved by controlling the ratio of Ge4+/Ge2+ in the precursor mix. Longer reaction times and higher temperatures were also observed to have an effect on the nanoparticle size distribution. Microwave heating resulted in crystalline nanoparticles at lower temperatures than conventional resistive heating because of the ability of germanium iodides to convert electromagnetic radiation directly to heat. The reported approach for germanium nanoparticle preparation avoids the use of strong reducing agents (LiAlH4, n-BuLi, NaBH4) and HF for etching and, thus, can be considered simple, safe, and amenable to industrial-level scaleup. The as-prepared nanoparticles are a stable dispersion (hexane or toluene) for weeks when stored under an inert atmosphere (N2/Ar). The stability of the colloidal dispersion was observed to be dependent on the nanoparticle size, with smaller nanoparticles exhibiting longer stability. On exposure to ambient conditions, oxidation occurs over a period of time and results in slow precipitation of the nanoparticles. The nanoparticles have been characterized by powder X-ray diffraction (PXRD), transmission electron microscopy (TEM), and spectroscopic techniques (UV-Vis-NIR, FTIR, Raman).Keywords: germanium nanocrystals; microwave synthesis; size control;

Two rare-earth-containing ternary phosphides, Eu3Ga2P4 and Eu3In2P4, were synthesized by a two-step solid-state method with stoichiometric amounts of the constitutional elements. Refinements of the powder X-ray diffraction are consistent with the reported single-crystal structure with space group C2/c for Eu3Ga2P4 and Pnnm for Eu3In2P4. Thermal gravimetry and differential scanning calorimetry (TG-DSC) measurements reveal high thermal stability up to 1273 K. Thermal diffusivity measurements from room temperature to 800 K demonstrate thermal conductivity as low as 0.6 W/m·K for both compounds. Seebeck coefficient measurements from room temperature to 800 K indicate that both compounds are small band gap semiconductors. Eu3Ga2P4 shows p-type conductivity and Eu3In2P4 p-type conductivity in the temperature range 300–700 K and n-type conductivity above 700 K. Electronic structure calculations result in band gaps of 0.60 and 0.29 eV for Eu3Ga2P4 and Eu3In2P4, respectively. As expected for a valence precise Zintl phase, electrical resistivity is large, approximately 2600 and 560 mΩ·cm for Eu3Ga2P4 and Eu3In2P4 at room temperature, respectively. Measurements of transport properties suggest that these Zintl phosphides have potential for being good high-temperature thermoelectric materials with optimization of the charge carrier concentration by appropriate extrinsic dopants.

We describe the synthesis, materials characterization, and dynamic nuclear polarization (DNP) of amorphous and crystalline silicon nanoparticles for use as hyperpolarized magnetic resonance imaging (MRI) agents. The particles were synthesized by means of a metathesis reaction between sodium silicide (Na4Si4) and silicon tetrachloride (SiCl4) and were surface functionalized with a variety of passivating ligands. The synthesis scheme results in particles of diameter ∼10 nm with long size-adjusted 29Si spin–lattice relaxation (T1) times (>600 s), which are retained after hyperpolarization by low-temperature DNP.Keywords: dynamic nuclear polarization; hyperpolarization; magnetic resonance imaging; nanomedicine; nanoparticle; silicon

Intentional impurity doping lies at the heart of the silicon technology. The dopants provide electrons or holes as necessary carriers of the electron current and can significantly modify the electric, optical and magnetic properties of the semiconductors. P-doped amorphous Si (a-Si) was prepared by a solid state and solution metathesis reaction of a P-doped Zintl phase precursor, NaSi0.99P0.01, with an excess of NH4X (X = Br, I). After the salt byproduct was removed from the solid state reaction, the a-Si material was annealed at 600 °C under vacuum for 2 h, resulting in P-doped nanocrystalline Si (nc-Si) material embedded in a-Si matrix. The product from the solution reaction also shows a combination of nc-Si embedded in a-Si; however, it was fully converted to nc-Si after annealing under argon at 650 °C for 30 min. Powder X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) show the amorphous nature of the P-doped Si material before the annealing and the nanocrystallinity after the annealing. Fourier Transform Infrared (FTIR) spectroscopy shows that the P-doped Si material surface is partially capped by H and O or with solvent. Electron microprobe wavelength dispersive spectroscopy (WDS) as well as energy dispersive spectroscopy (EDS) confirm the presence of P in the Si material. 29Si and 31P solid state magic-angle-spinning nuclear magnetic resonance (MAS NMR) spectroscopy data provide the evidence of P doping into the Si structure with the P concentration of approximately 0.07 at.%.Intentional impurity doping lies at the heart of the silicon (Si) technology. The dopants provide electrons or holes as necessary carriers of the electron current and can significantly modify the electric, optical and magnetic properties of the semiconductors. P-doped amorphous Si (a-Si) and nanocrystalline Si (nc-Si) were prepared by solid state and solution processing. 29Si and 31P solid state magic-angle-spinning nuclear magnetic resonance (MAS NMR) spectroscopy data provide the evidence of P doping into nanocrystalline Si with the P concentration of approximately 0.07 at.%.

Silicon (Si) nanoparticles embedded in a Mg2Si matrix (Mg2Si/xSi) have been successfully synthesized at 623 K from MgH2 and Bi containing Si nanoparticle powders. The use of MgH2 in this synthetic route avoids the formation of oxides through the generation of hydrogen and provides a route to homogeneously mixed Si nanoparticles within a doped Mg2Si matrix. The samples were characterized by powder X-ray diffraction, thermogravimetry/differential scanning calorimetry (TG/DSC), electron microprobe analysis (EMPA), and scanning transmission electron microscopy (STEM). The final crystallite size of Mg2Si obtained from the XRD patterns is about 50 nm for all the samples and the crystallite size of Si inclusions is approximately 17 nm. Theoretical calculations indicate that ∼5 mol% concentrations of Si nanoparticles with diameters in the 5–50 nm range could decrease the lattice thermal conductivity of Mg2Si by about 1–10% below the matrix value. Reduction in thermal conductivity was observed with the smallest amount of Si, 2.5 mol%. Larger amounts, x = 10 mol%, did not provide any further reduction in thermal conductivity. Analysis of the microstructure of the Bi doped Mg2Si/xSi nanocomposites showed that the Bi dopant has a higher concentration at grain boundaries than within the grains and Bi preferentially substitutes the Mg site at the boundaries. The nanocomposite carrier concentration and mobility depend on the amount of Bi and Si inclusions in a complex fashion. Agglomerations of Si start to show up clearly in the Bi doped 5 mol% nanocomposite. While the inclusions result in a lower thermal conductivity, electrical resistivity and Seebeck are negatively affected as the presence of Si inclusions influences the amount of Bi dopant and therefore the carrier concentration. The x = 2.5 mol% nanocomposite shows a consistently higher zT throughout the measured temperature range until the highest temperatures where a dimensionless figure of merit zT ∼ 0.7 was obtained at 775 K for Mg2Si/xSi with x = 0 and 2.5 mol%. With optimization of the electronic states of the matrix and nanoparticle, further enhancement of the figure of merit may be achieved.

A series of single crystal samples, Yb14MnSb11−xTex (x ≤ 0.2), were investigated via Sn flux. The element distributions were mapped using an electron microprobe, which demonstrated inhomogeneity and limited solubility of Te in the crystals. The magnetic properties of two crystals of compositions Yb13.80(2)Mn1.03(1)Sb11.11(4)Te0.06(3) and Yb13.82(3)Mn1.02(1)Sb11.02(8)Te0.14(6) were investigated. Increasing amounts of Te increase the saturation moment of Yb14MnSb11−xTex, and slightly lower the ordering temperature TC by about 1 K. This is attributed to the filling of the hole in Yb14MnSb11 and the reduction of the screening of the Mn2+ d5 electrons, resulting in a higher effective moment. Hot-pressed, fully dense pellets of Yb13.72(3)Mn1.08(1)Sb11.13(6)Te0.07(5), Yb13.76(5)Mn1.11(1)Sb10.96(8)Te0.16(8), and Yb13.76(4)Mn1.10(2)Sb10.95(9)Te0.19(7) were prepared for thermoelectric property measurements. Both Seebeck coefficient and electrical resistivity increase with increasing amount of Te as a result of decreasing carrier concentration. Increasing amounts of YbTe with increasing x could be identified in the electron microprobe. The total thermal conductivity was approximately the same for all compositions, similar to that of Yb14MnSb11. The figure of merit zT reaches a maximum of 1.11 for x = 0.07 at 1240 K, which is approximately 12% higher than the parent compound, Yb14MnSb11.

Samples with the type I clathrate structure and composition Ba8AlxSi46–x, where x = 8, 10, 12, 14, and 15, were examined by neutron powder diffraction at 35 K. The clathrate type I structure contains Ba cations as guests in a framework derived from tetrahedrally coordinated Al/Si atoms. The framework is made up of five- and six-membered rings that form dodecahedral and tetrakaidecahedral cages. The change in distances between tetrahedral sites across the series is used to develop a model for the mixed Al/Si occupancy observed in the framework. The calculated volumes of the cages that contain the Ba atoms display a linear increase with increasing Al composition. In the smaller dodecahedral cages, the Ba atomic displacement parameter is symmetry constrained to be isotropic for all compositions. In the larger tetrakaidecahedral cages, the anisotropic atomic displacement of the Ba atom depends upon the composition: the displacement is perpendicular (x = 8) and parallel (x = 15) to the six-membered ring. This difference in direction of the displacement parameter is attributed to interaction with the Al in the framework and not to the size of the cage volume as x increases from 8 to 15. The influence of the site occupation of Al in the framework on displacement of the cation at the 6d site is demonstrated.

Samples of the type-I clathrate Sr8AlxSi46–x have been prepared by direct reaction of the elements. The type-I clathrate structure (cubic space group Pm3̅n) which has an Al–Si framework with Sr2+ guest atoms forms with a narrow composition range of 9.54(6) ≤ x ≤ 10.30(8). Single crystals with composition A8Al10Si36 (A = Sr, Ba) have been synthesized. Differential scanning calorimetry (DSC) measurements provide evidence for a peritectic reaction and melting point at ∼1268 and ∼1421 K for Sr8Al10Si36 and Ba8Al10Si36, respectively. Comparison of the structures reveals a strong correlation between the 24k-24k framework sites distances and the size of the guest cation. Electronic structure calculation and bonding analysis were carried out for the ordered models with the compositions A8Al6Si40 (6c site occupied completely by Al) and A8Al16Si30 (16i site occupied completely with Al). Analysis of the distribution of the electron localizability indicator (ELI) confirms that the Si–Si bonds are covalent, the Al–Si bonds are polar covalent, and the guest and the framework bonds are ionic in nature. The Sr8Al6Si40 phase has a very small band gap that is closed upon additional Al, as observed in Sr8Al16Si30. An explanation for the absence of a semiconducting “Sr8Al16Si30” phase is suggested in light of these findings.

The high temperature p-type thermoelectric material Yb14MnSb11 has been of increasing research interest since its high temperature thermoelectric properties were first measured in 2006. Subsequent substitutions of Zn, Al, and La into the structure have shown that this material can be further optimized by altering the carrier concentration or by reduction of spin-disorder scattering. Here the properties of the Yb14–xCaxMnSb11 solid solution series where isovalent Ca2+ is substituted for Yb2+ will be presented. Crystals of the Yb14–xCaxMnSb11 solid solution series were made by Sn-flux (x = 2, 4, 6, 8) with the following ratio of elements: (14–x)Yb: xCa: 6 Mn: 11Sb: 86Sn, and their structures determined by single crystal X-ray diffraction. The density of the material significantly decreases by over 2 g/cm3 as more Ca is added (from x = 1 to 8), because of the lighter mass of Ca. The resulting lower density is beneficial from a device manufacturing perspective where there is often a trade-off with the specific power per kilogram. The compounds crystallize in the Ca14AlSb11 structure type. The Ca substitution contributes to systematic lengthening the Mn–Sb bond while shortening the Sb–Sb bond in the 3 atom linear unit with increasing amounts of Ca. Temperature dependent thermoelectric properties, Seebeck, electrical resistivity, and thermal conductivity were measured from room temperature to 1273 K. Substitution of Yb with Ca improves the Seebeck coefficient while decreasing the thermal conductivity, along with decreasing the carrier concentration in this p-type material resulting in an enhanced thermoelectric figure of merit, zT, compared to Yb14MnSb11.

We demonstrate the synthesis of water-soluble allylamine-terminated Fe-doped Si (SixFe) nanoparticles as bimodal agents for optical and magnetic imaging. The preparation involves the synthesis of a single-source iron-containing precursor, Na4Si4 with x% Fe (x = 1, 5, 10), and its subsequent reaction with NH4Br to produce hydrogen-terminated SixFe nanoparticles. The hydrogen-capped nanoparticles are further terminated with allylamine via thermal hydrosilylation. Transmission electron microscopy indicates that the average particle diameter is ∼3.0 ± 1.0 nm. The Si5Fe nanoparticles show strong photoluminescence quantum yield in water (∼10%) with significant T2 contrast (r2/r1 value of 4.31). Electron paramagnetic resonance and Mössbauer spectroscopies indicate that iron in the nanoparticles is in the +3 oxidation state. Analysis of cytotoxicity using the resazurin assay on HepG2 liver cells indicates that the particles have minimal toxicity.Keywords: cytotoxicity; hepatocytes; iron doping; resazurin assay; silicon nanoparticles; thermal hydrosilylation bimodal imaging agents; water-soluble

A microwave-assisted reaction has been developed to produce hydrogen-terminated silicon quantum dots (QDs). The Si QDs were passivated for water solubility via two different methods: hydrosilylation produced 3-aminopropenyl-terminated Si QDs, and a modified Stöber process produced silica-encapsulated Si QDs. Both methods produce water-soluble QDs with maximum emission at 414 nm, and after purification, the QDs exhibit intrinsic fluorescence quantum yield efficiencies of 15 and 23%, respectively. Even though the QDs have different surfaces, they exhibit nearly identical absorption and fluorescence spectra. Femtosecond transient absorption spectroscopy was used for temporal resolution of the photoexcited carrier dynamics between the QDs and ligand. The transient dynamics of the 3-aminopropenyl-terminated Si QDs is interpreted as a formation and decay of a charge-transfer (CT) excited state between the delocalized π electrons of the carbon linker and the Si core excitons. This CT state is stable for ∼4 ns before reverting back to a more stable, long-living species. The silica-encapsulated Si QDs show a simpler spectrum without CT dynamics.

Investigation of nanomaterial disposition and fate in the body is critical before such material can be translated into clinical application. Herein a new macrocyclic ligand−64Cu2+ complex was synthesized and used to label dextran-coated silicon quantum dots (QD), with an average hydrodynamic diameter of 15.1 ± 7.6 nm. The chelate showed exceptional stability, demonstrated by no loss radiolabel under a ligand competition reaction with EDTA. The QDs’ biodistribution in mice was quantitatively evaluated by in vivo positron emission tomography (PET) imaging and ex vivo gamma counting. Results showed that they were excreted via renal filtration shortly postinjection and also accumulated in the liver.Keywords (keywords): Biodistribution; imaging; positron emission tomography; quantum dot; silicon

The title compound was prepared as single crystals using an aluminum flux technique. Single crystal and powder X-ray diffraction indicate that this composition crystallizes in the clathrate type-I structure, space group Pm3̄n. Electron microprobe characterization indicates the composition to be Ba8−ySryAl14.2(2)Si31.8(2) (0.77