The role of the contacts in thin-film, blended heterojunctions (<100 nm thick) organic photovoltaics is explored, specifically considering concepts of carrier selectivity, injection, and extraction efficiency, relative to recombination. Contact effects are investigated by comparing two hole-collecting interlayers: a phosphonic acid monolayer on indium tin oxide (ITO) and a nickel oxide thin film. The interlayers have equivalent work functions (≈5.4 eV) but widely variant energy band offsets relative to the lowest unoccupied molecular orbital of the acceptor (electron blocking versus not), which are coupled to large differences in carrier density. Trends in open-circuit voltages (V_OC) as a function of light intensity and temperature are compared and it is concluded that the dominant mechanism limiting V_OC for high density of states contacts is free carrier injection, not surface recombination or extraction barriers. Transient photocurrent decay measurements confirm excess reinjected carriers decrease the extraction efficiency via increased recombination and decrease free carrier lifetime, even at high internal electric fields, due to space charge accumulation. These results demonstrate that the energetics and injection dynamics of the interface between interlayers and high carrier density electrodes (typically ITO and metals) must be considered with fabrication and processing of interlayers, in addition to possible carrier selectivity and the interface with the active layer.

Gallium-doped zinc oxide (GZO) surfaces, both bare and modified with chemisorbed phosphonic acid (PA) molecules, are studied using a combination of density functional theory calculations and ultraviolet and X-ray photoelectron spectroscopy measurements. Excellent agreement between theory and experiment is obtained, which leads to an understanding of: i) the core-level binding energy shifts of the various oxygen atoms belonging to different surface sites and to the phosphonic acid molecules; ii) the GZO work-function change upon surface modification, and; iii) the energy level alignments of the frontier molecular orbitals of the PA molecules with respect to the valence band edge and Fermi level of the GZO surface. Importantly, both density of states calculations and experimental measurements of the valence band features demonstrate an increase in the density of states and changes in the characteristics of the valence band edge of GZO upon deposition of the phosphonic acid molecules. The new valence band features are associated with contributions from surface oxygen atoms near a defect site on the oxide surface and from the highest occupied molecular orbitals of the phosphonic acid molecules.

The role of work function and thermodynamic selectivity of hole collecting contacts on the origin of open circuit voltage (V_OC) in bulk heterojunction organic photovoltaics is examined for poly(N-9′-heptadecanyl-2,7-carbazole-alt-5,5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole) (PCDTBT) and [6,6]-phenyl-C₇₁ butyric acid methyl ester (PC₇₁BM) solar cells. In the absence of a charge selective, electron blocking contact, systematic variation of the work function of the contact directly dictates the V_OC, as defined by the energetic separation between the relative Fermi levels for holes and electrons, with little change in the observed dark saturation current, J₀. Improving the charge selectivity of the contact through an increased barrier to electron injection from the fullerene in the blend into the hole contact results in a decreased reverse saturation current (decreased J₀ and increased shunt resistance, R_SH) and improved V_OC. Based on these observations, we provide a set of contact design criteria for tuning the V_OC in bulk heterojunction organic photovoltaics.