Single crystals of an environmental friendly material LiInSe2 (LISe) with dimensions up to Φ16 mm × 55 mm were grown successfully through a modified vertical Bridgman technique. The quality of the crystal was measured by a high resolution X-ray diffraction rocking curve, and a full width at half-maximum (fwhm) for a, b, and c faces are 47″, 46″, 36″, respectively. It indicates that the as-grown crystal is high quality. The complete sets of dielectric, elastic, and piezoelectric constants of LISe crystals at room temperature were obtained by the resonant technique and impedance analysis for the first time. The piezoelectric constants d24 and d33 reached −13.6 pC/N and 8.5 pC/N, respectively. The corresponding electromechanical coupling coefficient k33 is 21%. In addition, the structural distortions and dipole moments of LISe were analyzed in detail. Our results show that LISe is a promising candidate as an environmental friendly piezoelectric material.

Two-dimensional (2D) materials have recently attracted great interest due to their promising optoelectronic applications. Orthorhombic SiP (o-SiP) is a 2D layered crystal and may have a significant impact on optoelectronic technologies. Large-sized bulk o-SiP single crystals have been successfully grown by a seeded flux method. The size and morphology of o-SiP crystals can be controlled by changing the growth conditions. The carrier mobility and band gap of o-SiP were characterized in detail. The photoresponse properties of o-SiP were investigated and a relatively fast response has been demonstrated. The experimental results indicate that o-SiP may be an excellent candidate for applications in electronics and optoelectronics.

Herein, a single crystal of FeSi4P4 (FSP) with dimensions up to 8 × 7 × 3 mm3 was successfully grown using a seeded flux growth method. Single crystal X-ray diffraction results revealed that the FSP crystal crystallized in the chiral space group P1 (no. 1). High-resolution X-ray diffraction presents a full-width at half-maximum (FWHM) of 36′′ and 46′′ for the (100) and (001) FSP crystals, respectively, which indicates that FSP crystals have high crystalline quality. FSP is thermally stable up to 1157.1 °C and has a high thermal conductivity of 35 W (m K)−1 at room temperature. The magnetic analysis shows that the FSP crystal is paramagnetic in the range from 5 to 300 K. The Hall effect measurement suggests that the FSP crystal is a promising p-type semiconductor at room temperature.

Molybdenum disulfide (MoS2) has attracted a great deal of attention because of its outstanding physical, chemical and optoelectronic properties. The method used to prepare large sized MoS2 crystals of very high quality is still an important issue for determining the feasibility of its application. Herein, we propose a novel Sn flux method to grow single crystal MoS2, and bulk MoS2 single crystals with a size of 3 mm × 5 mm were successfully obtained by using a cooling rate of 2–4 °C h−1. The growth mechanism of the MoS2 crystal in Sn flux was investigated in detail using optical microscopy and atomic force microscopy (AFM). The obvious screw dislocation steps that are revealed suggest that the growth of MoS2 is controlled by a screw-dislocation-driven (SDD) spiral growth mechanism. The flux-grown MoS2 crystals were exfoliated to produce high-quality large-scale films using the liquid-phase exfoliation method. Using ultrathin MoS2 films as a saturable absorber, a passively Q-switched laser at a wavelength of 1.06 μm was constructed and operated, with a narrow pulse width of 326 ns.

•A new phase of SiP2 has been grown in Sn flux.•A mineralizer was used for crystal growth.•It is a layered structure semiconductor and its structure is closely related to the known phase.A new orthorhombic phase of silicon diphosphide has been grown in Sn flux by using Gd as a mineralizer. It is a needle-like crystal and its structure has been determined through single crystal X-ray diffraction and elemental analysis. It crystallizes in the orthorhombic space group Pnma (No. 62, Z = 8) with cell parameters: a = 10.0908(19) Å, b = 3.4388(6) Å and c = 13.998(3) Å and the final R value is 0.0294. It has a layered structure that is closely related to the Pbam phase of SiP2. Its optical band gap is 1.45 eV and it decomposes at 1002 K.