Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.

The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.

Low Schottky barrier electrode has great significance on CdZnTe semiconductor nuclear radiation detectors. In this work, synchrotron radiation photoemission spectroscopy (SRPES) has been used to study the interface electronic structure of chromium (Cr) and CdZnTe with Cr coverage thicknesses ranging from 6 to 45.7 Å. Interface reaction and diffusion happen during the Cr deposition. A new interface structure CdZnTe–Cr–Te hence forms, which causes a positive dipole layer at the interface. Schottky barrier height (SBH) is reduced by 0.34 eV due to the dipole layer. Cr/CdZnTe interface structure can effectively change the SBH. Therefore, Cr can be a favorable low Schottky barrier electrode material for CdZnTe detector.

The interface layer has great significance on the potential barrier height of the CdTe/GaAs heterointerface. In this study, the electronic properties of the CdTe/GaAs heterostructure prepared by molecular beam epitaxy was investigated in situ by synchrotron radiation photoemission spectroscopy for CdTe thicknesses ranging from 3.5 to 74.6 Å. During CdTe deposition, an As–Te and Ga–Te interface reaction occurred, which caused the out diffusion of Ga. As a result a stable GaTe interface dipole layer (more than 30 Å) was formed, which reduced the potential barrier height by 0.38 eV. The potential barrier height was in proportion to the chemical bonding density and thickness of the Ga–Te interface layer. These results provide a more fundamental understanding of the influencing mechanism of the interface layer on the potential barrier height of the CdTe/GaAs heterointerface.

Correction for ‘Effects of Ga–Te interface layer on the potential barrier height of CdTe/GaAs heterointerface’ by Shouzhi Xi et al., Phys. Chem. Chem. Phys., 2016, 18, 2639–2645.